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NTD4808N-1G

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NTD4808N-1G

MOSFET N-CH 30V 10A/63A IPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTD4808N-1G is an N-Channel Power MOSFET designed for robust performance in demanding applications. This through-hole component features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) rating of 10 A at 25°C ambient, scaling to 63 A at 25°C case temperature. With a low on-resistance (Rds On) of 8 mOhm at 30 A and 10 V Vgs, it offers efficient power handling, dissipating up to 54.6 W at 25°C case temperature. The device operates with gate drive voltages between 4.5 V and 11.5 V, and exhibits a gate charge (Qg) of 13 nC at 4.5 V. Input capacitance (Ciss) is a maximum of 1538 pF at 12 V Vds. The IPAK (TO-251AA) package is suitable for automated assembly. This MOSFET is utilized in industries such as automotive, industrial power control, and consumer electronics. Operating temperature range is -55°C to 175°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs8mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)1.4W (Ta), 54.6W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageIPAK
Drive Voltage (Max Rds On, Min Rds On)4.5V, 11.5V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1538 pF @ 12 V

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