NTD4806NT4G
MOSFET N-CH 30V 11.3A/79A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4806NT4G is an N-Channel Power MOSFET designed for efficient switching applications. This component offers a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 11.3 A at ambient temperature (Ta) and 79 A at case temperature (Tc). With a low on-resistance (Rds On) of 6 mOhm at 30 A and 10 V, it minimizes conduction losses. The device features surface mount mounting in a TO-252-3, DPAK package, facilitating integration into compact designs. Maximum power dissipation is rated at 1.4 W (Ta) and 68 W (Tc). Key electrical characteristics include a gate charge (Qg) of 23 nC at 4.5 V and input capacitance (Ciss) of 2142 pF at 12 V. Its operating temperature range is -55°C to 175°C. This MOSFET finds application in power management, automotive, and industrial systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.3A (Ta), 79A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.4W (Ta), 68W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2142 pF @ 12 V |
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