NTD4806NAT4G
MOSFET N-CH 30V 11.3A/79A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD4806NAT4G is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and supports a continuous drain current (Id) of 11.3A at 25°C ambient temperature, scaling to 79A under typical case conditions. The low on-resistance (Rds On) of 6mOhm at 30A and 10V gate-source drive ensures minimal power loss during conduction. With a gate charge (Qg) of 23nC at 4.5V and input capacitance (Ciss) of 2142pF at 12V, it is suitable for various power management and conversion circuits. The NTD4806NAT4G is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, supplied on tape and reel for automated assembly. This MOSFET is commonly utilized in automotive, industrial power supplies, and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.3A (Ta), 79A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2142 pF @ 12 V |
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