NTD4806NA-1G
MOSFET N-CH 30V 11.3A/79A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD4806NA-1G is a through-hole N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 30 V and a continuous drain current capability of 11.3 A at 25°C ambient temperature, scaling to 79 A at 25°C case temperature. The low on-resistance of 6 mOhm is achieved at 30 A drain current and 10 V gate-source voltage (Vgs). Key electrical characteristics include a maximum gate charge (Qg) of 23 nC at 4.5 V Vgs and an input capacitance (Ciss) of 2142 pF at 12 V Vds. The device is housed in a TO-251-3 Short Leads, IPAK package. This MOSFET is suitable for use in power management, automotive, and industrial motor control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.3A (Ta), 79A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2142 pF @ 12 V |
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