NTD4806N-35G
MOSFET N-CH 30V 11.3A/79A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD4806N-35G is an N-Channel Power MOSFET designed for efficient switching applications. This component offers a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current capability of 11.3A at 25°C ambient and 79A when measured at the case. Featuring a low on-resistance of 6mOhm at 30A and 10V drain-source voltage, this MOSFET is optimized for applications requiring minimal power loss. The device supports a gate drive voltage range from 4.5V to 11.5V. With a maximum power dissipation of 1.4W (ambient) and 68W (case), it is suitable for demanding thermal environments. The NTD4806N-35G is housed in an IPAK (TO-251-3) package, facilitating through-hole mounting. Key parameters include a gate charge (Qg) of 23 nC at 4.5V and input capacitance (Ciss) of 2142 pF at 12V. This MOSFET is commonly utilized in power supply, automotive, and industrial control systems. Operating temperature range is -55°C to 175°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.3A (Ta), 79A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.4W (Ta), 68W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2142 pF @ 12 V |
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