NTD4806N-1G
MOSFET N-CH 30V 11.3A/79A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4806N-1G is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and offers a continuous Drain Current (Id) of 11.3A at 25°C ambient and 79A continuous drain current at 25°C case temperature. The device exhibits a low On-Resistance (Rds On) of 6mOhm maximum at 30A and 10V. It is housed in a TO-251-3 Short Leads, IPAK package, suitable for through-hole mounting. Key electrical characteristics include a Gate Charge (Qg) of 23 nC maximum at 4.5V and an Input Capacitance (Ciss) of 2142 pF maximum at 12V. The NTD4806N-1G operates across a wide temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 1.4W (Ta) and 68W (Tc). This component is commonly utilized in automotive and industrial applications requiring robust power management.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.3A (Ta), 79A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.4W (Ta), 68W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2142 pF @ 12 V |
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