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NTD4805N-35G

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NTD4805N-35G

MOSFET N-CH 30V 12.7A/95A IPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NTD4805N-35G is an N-Channel Power MOSFET designed for high-efficiency switching applications. This through-hole component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 12.7A at 25°C ambient or 95A at 25°C case temperature. The low on-resistance (Rds On) of 5mOhm at 30A and 10V gate drive makes it suitable for power management solutions. Key parameters include a gate charge (Qg) of 48nC at 11.5V and input capacitance (Ciss) of 2865pF at 12V. The device operates within a temperature range of -55°C to 175°C. This MOSFET is commonly utilized in automotive and industrial power control systems. The package is TO-251-3 Stub Leads, IPAK, supplied in tubes.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-251-3 Stub Leads, IPAK
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12.7A (Ta), 95A (Tc)
Rds On (Max) @ Id, Vgs5mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)1.41W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageIPAK
Drive Voltage (Max Rds On, Min Rds On)4.5V, 11.5V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs48 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds2865 pF @ 12 V

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