NTD4805N-1G
MOSFET N-CH 30V 12.7A/95A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD4805N-1G is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 12.7A at a temperature of 25°C (ambient), scaling to 95A under 25°C case temperature. The on-resistance (Rds On) is a maximum of 5mOhm at 30A and 10V. Key parameters include a gate charge (Qg) of 48 nC at 11.5V and input capacitance (Ciss) of 2865 pF at 12V. Power dissipation reaches 1.41W (ambient) and 79W (case). The device operates across a temperature range of -55°C to 175°C and is housed in a TO-251-3 Short Leads, IPAK package for through-hole mounting. This MOSFET is commonly utilized in power supply units, automotive electronics, and industrial motor control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.7A (Ta), 95A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.41W (Ta), 79W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 11.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2865 pF @ 12 V |
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