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NTD4804NAT4G

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NTD4804NAT4G

MOSFET N-CH 30V 14.5A/124A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTD4804NAT4G is an N-Channel Power MOSFET designed for robust performance in demanding applications. Featuring a drain-source voltage (Vdss) of 30V, this component offers a continuous drain current (Id) of 14.5A at 25°C ambient temperature and 124A at 25°C case temperature. The low on-resistance (Rds On) of 4mOhm at 30A and 10V drive voltage, coupled with a maximum gate charge (Qg) of 40 nC at 4.5V, ensures efficient power switching. This MOSFET operates within a temperature range of -55°C to 175°C and has a maximum power dissipation of 1.43W (ambient) and 93.75W (case). Its TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package is suitable for high-density board designs. Applications include automotive, industrial power control, and power management systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14.5A (Ta), 124A (Tc)
Rds On (Max) @ Id, Vgs4mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)1.43W (Ta), 93.75W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)4.5V, 11.5V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds4490 pF @ 12 V

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