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NTD4804NA-35G

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NTD4804NA-35G

MOSFET N-CH 30V 14.5A/124A IPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTD4804NA-35G is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 30V and offers a continuous drain current (Id) of 14.5A at 25°C ambient temperature, scaling to 124A at 25°C case temperature. Its low on-resistance (Rds On) of 4mOhm at 30A and 10V gate-source voltage ensures efficient power transfer. The device exhibits a maximum gate charge (Qg) of 40 nC at 4.5V and an input capacitance (Ciss) of 4490 pF at 12V. With a maximum power dissipation of 1.43W (Ta) and 93.75W (Tc), this MOSFET is suitable for through-hole mounting in an IPAK package (TO-251-3 Stub Leads). Operating temperature ranges from -55°C to 175°C. This component finds utility in industrial automation, power supply units, and automotive systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-251-3 Stub Leads, IPAK
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14.5A (Ta), 124A (Tc)
Rds On (Max) @ Id, Vgs4mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)1.43W (Ta), 93.75W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageIPAK
Drive Voltage (Max Rds On, Min Rds On)4.5V, 11.5V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds4490 pF @ 12 V

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