NTD4804NA-1G
MOSFET N-CH 30V 14.5A/124A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4804NA-1G is an N-Channel Power MOSFET designed for efficient power switching applications. It features a 30V drain-source voltage (Vdss) and offers a continuous drain current of 14.5A at 25°C ambient temperature (Ta) and 124A at 25°C case temperature (Tc). With a low on-resistance (Rds On) of 4mOhm at 30A and 10V, this MOSFET minimizes conduction losses. The device boasts a maximum power dissipation of 1.43W (Ta) and 93.75W (Tc), along with a low thermal resistance. Its IPAK package (TO-251-3 Short Leads) facilitates through-hole mounting. Typical applications include power management, motor control, and automotive systems where robust performance and thermal efficiency are critical. The gate charge (Qg) is 40nC at 4.5V, and input capacitance (Ciss) is 4490pF at 12V, enabling fast switching speeds. Operating temperature range is -55°C to 175°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14.5A (Ta), 124A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.43W (Ta), 93.75W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4490 pF @ 12 V |
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