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NTD4804N-35G

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NTD4804N-35G

MOSFET N-CH 30V 14.5A/124A IPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTD4804N-35G is an N-Channel Power MOSFET designed for efficient power switching. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous drain current (Id) rating of 14.5A at 25°C ambient and 124A at 25°C case temperature. The low on-resistance of 4mOhm at 30A and 10V gate-source voltage (Vgs) is achieved with a Vgs(th) of 2.5V and drive voltages ranging from 4.5V to 11.5V. It offers a maximum power dissipation of 1.43W (Ta) and 107W (Tc). Key parameters include a gate charge (Qg) of 40 nC at 4.5V and input capacitance (Ciss) of 4490 pF at 12V. The NTD4804N-35G is housed in an IPAK (TO-251-3 Stub Leads) package for through-hole mounting and operates within an extended temperature range of -55°C to 175°C. This device is suitable for applications in automotive and industrial power management systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-251-3 Stub Leads, IPAK
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14.5A (Ta), 124A (Tc)
Rds On (Max) @ Id, Vgs4mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)1.43W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageIPAK
Drive Voltage (Max Rds On, Min Rds On)4.5V, 11.5V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds4490 pF @ 12 V

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