NTD4804N-1G
MOSFET N-CH 30V 14.5A/124A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4804N-1G is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 14.5 A at ambient temperature and 124 A at case temperature. With a low on-resistance (Rds On) of 4 mOhm at 30 A and 10 V, and a gate charge (Qg) of 40 nC at 4.5 V, it offers excellent conduction and switching characteristics. The NTD4804N-1G supports a gate-source voltage range of ±20 V and a threshold voltage (Vgs(th)) of 2.5 V at 250 µA. It is packaged in an IPAK (TO-251-3 Short Leads) for through-hole mounting. This component is suitable for use in automotive, industrial, and consumer electronics power management systems. The maximum power dissipation is 1.43 W at ambient temperature and 107 W at case temperature. Operating temperature range is -55°C to 175°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14.5A (Ta), 124A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.43W (Ta), 107W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4490 pF @ 12 V |
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