NTD4302T4G
MOSFET N-CH 30V 8.4A/68A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4302T4G is an N-Channel Power MOSFET designed for demanding applications. This component features a 30 V drain-to-source voltage (Vdss) and offers a continuous drain current of 8.4 A at ambient temperature and 68 A at case temperature. Its low on-resistance of 10 mOhm at 20 A and 10 V gate-source voltage (Vgs) minimizes conduction losses. The device supports a gate drive range from 4.5 V to 10 V, with a maximum gate-source voltage of ±20 V. Key electrical parameters include a maximum gate charge (Qg) of 80 nC at 10 V and a maximum input capacitance (Ciss) of 2400 pF at 24 V. The NTD4302T4G is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package, suitable for efficient thermal management with a maximum power dissipation of 75 W at case temperature. Operating temperature ranges from -55°C to 150°C. This MOSFET is commonly utilized in power switching, voltage regulation, and motor control circuits across automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.4A (Ta), 68A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.04W (Ta), 75W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 24 V |
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