NTD4302T4
MOSFET N-CH 30V 8.4A/68A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD4302T4 is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a continuous drain current of 8.4A at a temperature of 25°C (ambient) and 68A at 25°C (case), with a Drain-to-Source Voltage (Vdss) of 30V. The device exhibits a low on-resistance (Rds On) of 10mOhm at 20A and 10V Vgs. Key characteristics include a maximum power dissipation of 1.04W (ambient) and 75W (case), a gate charge (Qg) of 80 nC at 10V, and input capacitance (Ciss) of 2400 pF at 24V. The NTD4302T4 is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, suitable for automated assembly. It operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is commonly utilized in automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.4A (Ta), 68A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.04W (Ta), 75W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 24 V |
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