NTD4302G
MOSFET N-CH 30V 8.4A/68A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD4302G is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-source breakdown voltage (Vdss) of 30V and offers a continuous drain current (Id) of 8.4A at 25°C ambient temperature and 68A at 25°C case temperature. The low on-resistance (Rds(on)) is specified as a maximum of 10mOhm at 20A and 10V gate-source voltage (Vgs). The MOSFET supports a Vgs range of up to +/-20V, with a threshold voltage (Vgs(th)) of 3V at 250µA. Key capacitive parameters include input capacitance (Ciss) of 2400pF at 24V and gate charge (Qg) of 80nC at 10V. Power dissipation is rated at 1.04W (Ta) and 75W (Tc). The NTD4302G is housed in a surface-mount TO-252-3, DPAK (2 Leads + Tab), SC-63 package and operates within an industrial temperature range of -55°C to 150°C. It finds utility in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.4A (Ta), 68A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.04W (Ta), 75W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 24 V |
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