NTD4302-1G
MOSFET N-CH 30V 8.4A/68A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4302-1G is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 8.4A at an ambient temperature of 25°C, escalating to 68A under a case temperature of 25°C. With a low on-resistance (Rds On) of 10mOhm at 20A and 10V Vgs, it minimizes conduction losses. The NTD4302-1G offers a maximum power dissipation of 1.04W (Ta) and 75W (Tc). It is packaged in an IPAK (TO-251-3 Short Leads, TO-251AA) through-hole package, suitable for thermal management. Key parameters include a gate charge of 80 nC at 10V Vgs and input capacitance (Ciss) of 2400 pF at 24V Vds. Operating temperature range is from -55°C to 150°C. This MOSFET finds utility in automotive, industrial, and power supply applications requiring robust power switching.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.4A (Ta), 68A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.04W (Ta), 75W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 24 V |
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