NTD4302
MOSFET N-CH 30V 8.4A/68A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4302 is an N-Channel MOSFET designed for power switching applications. This component features a 30V drain-to-source voltage and a continuous drain current of 8.4A at ambient temperature and 68A at case temperature. The on-resistance is a maximum of 10mOhm at 20A and 10V gate-source voltage. With a power dissipation of 1.04W at ambient and 75W at case temperature, it is suitable for demanding thermal environments. The NTD4302 utilizes MOSFET technology and comes in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package for surface mounting. Key electrical parameters include a maximum gate charge of 80 nC at 10V and an input capacitance of 2400 pF at 24V. This device operates within a temperature range of -55°C to 150°C. Applications include automotive systems and power management solutions.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.4A (Ta), 68A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.04W (Ta), 75W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 24 V |
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