NTD40N03RT4G
MOSFET N-CH 25V 7.8A/32A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD40N03RT4G is an N-channel power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 25 V and offers a continuous drain current capability of 7.8 A at 25°C ambient and 32 A at 25°C case temperature. The NTD40N03RT4G exhibits a maximum on-resistance (Rds On) of 16.5 mOhms at 10 A and 10 V gate-source voltage. With a maximum power dissipation of 1.5 W (Ta) and 50 W (Tc), it is suitable for thermal management in various systems. Key electrical characteristics include a typical gate charge (Qg) of 5.78 nC at 4.5 V and input capacitance (Ciss) of 584 pF at 20 V. The device operates within an extended temperature range of -55°C to 175°C (TJ). This MOSFET is supplied in a TO-252-3, DPAK surface-mount package, commonly utilized in automotive and industrial power management sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.8A (Ta), 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.78 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 584 pF @ 20 V |
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