NTD40N03RG
MOSFET N-CH 25V 7.8A/32A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD40N03RG is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a 25V drain-source breakdown voltage (Vdss) and offers a continuous drain current rating of 7.8A at 25°C ambient temperature and 32A at 25°C case temperature. With a low on-resistance of 16.5mOhm maximum at 10A and 10V, it minimizes conduction losses. The MOSFET is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, facilitating integration into various board designs. Key parameters include a gate charge (Qg) of 5.78 nC maximum at 4.5V and input capacitance (Ciss) of 584 pF maximum at 20V. The NTD40N03RG operates across a wide temperature range of -55°C to 175°C (TJ) and supports gate drive voltages from 4.5V to 10V. Power dissipation is rated at 1.5W (Ta) and 50W (Tc) maximum. This component is suitable for use in automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.8A (Ta), 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.78 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 584 pF @ 20 V |
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