NTD40N03R-1G
MOSFET N-CH 25V 7.8A/32A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD40N03R-1G is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 25V and offers a continuous drain current capability of 7.8A at 25°C ambient and 32A at 25°C case temperature. With a maximum Rds(on) of 16.5mOhm at 10A and 10V Vgs, it ensures low conduction losses. The device supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage of ±20V. Key electrical characteristics include a typical input capacitance (Ciss) of 584pF at 20V Vds and a gate charge (Qg) of 5.78nC at 4.5V Vgs. The NTD40N03R-1G has a power dissipation rating of 1.5W (Ta) and 50W (Tc) and operates across a wide temperature range of -55°C to 175°C. Packaged in an IPAK (TO-251-3 Short Leads) through-hole format, this MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.8A (Ta), 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.78 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 584 pF @ 20 V |
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