NTD3817NT4G
MOSFET N-CH 16V 7.6A/34.5A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD3817NT4G is an N-Channel Power MOSFET designed for efficient power management. This component features a 16V drain-source breakdown voltage (Vdss) and offers a continuous drain current capability of 7.6A at 25°C ambient (Ta) and 34.5A at 25°C case temperature (Tc). With a maximum on-resistance (Rds On) of 13.9mOhm at 15A and 10V gate drive, it is optimized for applications requiring low conduction losses. The device supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage (Vgs) of ±16V. Key parameters include a typical gate charge (Qg) of 10.5 nC at 4.5V and input capacitance (Ciss) of 702 pF at 12V. The NTD3817NT4G is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, facilitating integration into compact circuit designs. Its power dissipation is rated at 1.2W (Ta) and 25.9W (Tc), with an operating junction temperature range of -55°C to 175°C. This MOSFET is suitable for use in automotive and industrial power supply applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Ta), 34.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.9mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta), 25.9W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 16 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 702 pF @ 12 V |
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