NTD3817N-35G
MOSFET N-CH 16V 7.6A/34.5A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD3817N-35G is an N-Channel MOSFET designed for efficient power switching applications. This device features a Drain-Source Voltage (Vdss) of 16 V and offers a continuous drain current capability of 7.6 A at ambient temperature (Ta) and 34.5 A at case temperature (Tc). The low on-resistance (Rds On) of 13.9 mOhm at 15 A and 10 V gate-source voltage (Vgs) ensures minimal conduction losses. With a maximum gate charge (Qg) of 10.5 nC at 4.5 V Vgs and input capacitance (Ciss) of 702 pF at 12 V Vds, it is suitable for various switching frequencies. The NTD3817N-35G is housed in an IPAK (TO-251-3 Stub Leads) package, facilitating through-hole mounting. Operating across an extended temperature range of -55°C to 175°C (TJ), this MOSFET finds application in automotive, industrial, and consumer electronics where robust power management is critical. Power dissipation is rated at 1.2 W (Ta) and 25.9 W (Tc).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Ta), 34.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.9mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta), 25.9W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 16 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 702 pF @ 12 V |
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