NTD3817N-1G
MOSFET N-CH 16V 7.6A/34.5A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD3817N-1G is an N-Channel MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 16V and offers continuous drain current capabilities of 7.6A at 25°C ambient temperature and 34.5A at 25°C case temperature. With a low on-resistance of 13.9mOhm maximum at 15A and 10V Vgs, and a gate charge of 10.5 nC maximum at 4.5V Vgs, it is optimized for efficient switching. The device supports a gate drive range from 4.5V to 10V. Power dissipation reaches 1.2W (Ta) and 25.9W (Tc). Packaged in an IPAK (TO-251-3 Short Leads) and supplied in a tube, this MOSFET is suitable for various industrial and automotive power management solutions. Its operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Ta), 34.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.9mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta), 25.9W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 16 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 702 pF @ 12 V |