NTD3813NT4G
MOSFET N-CH 16V 9.6A/51A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD3813NT4G is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a drain-source voltage (Vdss) of 16 V and a continuous drain current (Id) capability of 9.6 A at 25°C ambient and 51 A at 25°C case temperature. The on-resistance (Rds On) is specified at a maximum of 8.75 mOhm at 15 A and 10 V gate drive. It operates with a gate-source voltage (Vgs) range of ±16 V, and a threshold voltage (Vgs(th)) of 2.5 V at 250 µA. Key parameters include a gate charge (Qg) of 12.8 nC at 4.5 V and input capacitance (Ciss) of 963 pF at 12 V. The NTD3813NT4G is housed in a TO-252-3, DPAK (2 Leads + Tab) surface-mount package, offering excellent thermal performance with a maximum power dissipation of 1.2 W (Ta) and 34.9 W (Tc). This component is suitable for use in power supplies, automotive applications, and industrial power management systems. The device is supplied on a tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.6A (Ta), 51A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.75mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta), 34.9W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 16 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 963 pF @ 12 V |
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