NTD3813N-35G
MOSFET N-CH 16V 9.6A/51A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD3813N-35G is an N-Channel Power MOSFET designed for demanding applications. This through-hole component, housed in an IPAK (TO-251-3) package, features a Drain-Source Voltage (Vdss) of 16V. It offers a continuous drain current of 9.6A at 25°C ambient and 51A at 25°C case temperature. The on-resistance (Rds On) is specified at a maximum of 8.75mOhm at 15A and 10V gate drive. Key parameters include a gate charge (Qg) of 12.8 nC @ 4.5V and input capacitance (Ciss) of 963 pF @ 12V. Power dissipation is rated at 1.2W (Ta) and 34.9W (Tc). Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.6A (Ta), 51A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.75mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta), 34.9W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 16 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 963 pF @ 12 V |
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