NTD3813N-1G
MOSFET N-CH 16V 9.6A/51A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD3813N-1G is an N-Channel Power MOSFET designed for demanding applications. This device features a 16V drain-source breakdown voltage (Vdss) and offers a continuous drain current of 9.6A at 25°C ambient and 51A at 25°C case temperature. The low on-resistance (Rds On) of 8.75mOhm is achieved at 15A and 10V Vgs, with a threshold voltage (Vgs(th)) of 2.5V at 250µA. Key parameters include a gate charge (Qg) of 12.8nC at 4.5V Vgs and an input capacitance (Ciss) of 963pF maximum at 12V Vds. The NTD3813N-1G is packaged in an IPAK (TO-251-3 Short Leads) for through-hole mounting and supports a maximum power dissipation of 1.2W (Ta) or 34.9W (Tc). This component is suitable for applications in automotive and industrial power management systems. The operating temperature range is -55°C to 175°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.6A (Ta), 51A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.75mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta), 34.9W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 16 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 963 pF @ 12 V |
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