NTD3808N-35G
MOSFET N-CH 16V 12A/76A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD3808N-35G is an N-Channel MOSFET designed for power switching applications. This component features a Drain-Source Voltage (Vdss) of 16V and offers a continuous drain current capability of 12A at ambient temperature (Ta) and 76A at case temperature (Tc). With a low on-resistance of 5.8mOhm at 15A and 10V, it minimizes conduction losses. The device utilizes MOSFET technology and is housed in a TO-251-3 Stub Leads, IPAK package suitable for through-hole mounting. Key parameters include a gate charge (Qg) of 21 nC at 4.5V and input capacitance (Ciss) of 1660 pF at 12V. The NTD3808N-35G operates across a wide temperature range of -55°C to 175°C. This device finds application in various industries including industrial power supplies and automotive electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 76A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 16 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1660 pF @ 12 V |
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