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NTD3808N-1G

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NTD3808N-1G

MOSFET N-CH 16V 12A/76A IPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTD3808N-1G is an N-Channel Power MOSFET designed for demanding applications. This component features a 16V drain-source breakdown voltage and offers a continuous drain current of 12A at ambient temperature and 76A at case temperature. Its low on-resistance of 5.8mOhm at 15A and 10V gate drive makes it suitable for efficient power switching. With a maximum continuous drain current of 76A (Tc) and a power dissipation of 52W (Tc), this MOSFET is engineered for robust performance. Key electrical parameters include a gate charge (Qg) of 21 nC at 4.5V and input capacitance (Ciss) of 1660 pF at 12V. The device operates within a temperature range of -55°C to 175°C. Packaged in an IPAK (TO-251-3 Short Leads, TO-251AA) through-hole package, the NTD3808N-1G is well-suited for power management circuits in automotive and industrial sectors. It supports gate drive voltages from 4.5V to 10V and has a ±16V gate-source voltage limit.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs5.8mOhm @ 15A, 10V
FET Feature-
Power Dissipation (Max)1.3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageIPAK
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)16 V
Gate Charge (Qg) (Max) @ Vgs21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1660 pF @ 12 V

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