NTD32N06T4G
MOSFET N-CH 60V 32A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD32N06T4G is a 60V N-Channel MOSFET in a DPAK package, suitable for high-current applications. This device features a continuous drain current rating of 32A (Ta) at 25°C and a low on-resistance of 26mOhm at 16A and 10V Vgs. With a gate charge of 60nC (Max) at 10V and input capacitance of 1725pF (Max) at 25V, it offers efficient switching characteristics. The operating temperature range is -55°C to 175°C (TJ), with a maximum power dissipation of 1.5W (Ta) and 93.75W (Tj). This MOSFET is commonly utilized in power supply circuits, motor control, and automotive applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 93.75W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1725 pF @ 25 V |
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