NTD32N06LT4G
MOSFET N-CH 60V 32A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NTD32N06LT4G is an N-Channel MOSFET designed for demanding applications. This component offers a 60V drain-to-source voltage (Vdss) and a continuous drain current capability of 32A at 25°C. Featuring a low on-resistance of 28mOhm at 16A and 5V gate-source voltage (Vgs), it ensures efficient power transfer. The device has a maximum gate charge of 50 nC at 5V and an input capacitance (Ciss) of 1700 pF at 25V. Its surface mount DPAK package (TO-252-3) supports a wide operating temperature range from -55°C to 175°C (TJ). Power dissipation is rated at 1.5W (Ta) and 93.75W (Tj). This MOSFET is commonly utilized in power management, automotive systems, and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 16A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 93.75W (Tj) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
2SK4088LS-1E
MOSFET N-CH 650V 7.5A TO220F-3FS
NTMFS4C028NT3G
MOSFET N-CH 30V 16.4A/52A 5DFN
