NTD32N06L-001
MOSFET N-CH 60V 32A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD32N06L-001 is an N-channel Power MOSFET designed for demanding applications. This through-hole component features a 60V drain-source breakdown voltage (Vdss) and supports a continuous drain current of 32A at 25°C (Ta). With a low on-resistance of 28mOhm maximum at 16A and 5V gate drive, it minimizes conduction losses. The device boasts a maximum gate charge of 50 nC at 5V and an input capacitance (Ciss) of 1700 pF maximum at 25V. Its IPAK package (TO-251-3 Short Leads) facilitates efficient thermal management, offering a power dissipation of 1.5W (Ta) and 93.75W (Tj). Operating across a temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 16A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 93.75W (Tj) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V |
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