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NTD32N06L

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NTD32N06L

MOSFET N-CH 60V 32A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTD32N06L is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 32A at 25°C (Ta). With a low on-resistance (Rds On) of 28mOhm at 16A and 5V Vgs, it minimizes conduction losses. The device offers a maximum power dissipation of 1.5W at 25°C (Ta) and 93.75W at the junction temperature (Tj). Key characteristics include a gate charge (Qg) of 50 nC (max) at 5V and an input capacitance (Ciss) of 1700 pF (max) at 25V. Operating over an extended temperature range of -55°C to 175°C (Tj), this MOSFET is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package. It is suitable for use in power supply, automotive, and industrial control systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C32A (Ta)
Rds On (Max) @ Id, Vgs28mOhm @ 16A, 5V
FET Feature-
Power Dissipation (Max)1.5W (Ta), 93.75W (Tj)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1700 pF @ 25 V

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