NTD32N06G
MOSFET N-CH 60V 32A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD32N06G is an N-Channel Power MOSFET designed for demanding applications. This device features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) rating of 32A at 25°C ambient. Its low on-resistance of 26mOhm is achieved at 16A and 10V Vgs. The NTD32N06G offers a maximum gate charge of 60 nC at 10V and an input capacitance (Ciss) of 1725 pF at 25V. With a maximum power dissipation of 1.5W (ambient) and 93.75W (junction), this MOSFET is suitable for high-power switching and motor control applications. It is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 for surface mounting and operates across a temperature range of -55°C to 175°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 93.75W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1725 pF @ 25 V |
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