NTD32N06-1G
MOSFET N-CH 60V 32A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD32N06-1G is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a Drain-Source Voltage (Vdss) of 60 V and a continuous Drain Current (Id) rating of 32 A at 25°C. The low on-resistance, specified as a maximum of 26 mOhm at 16 A and 10 Vgs, minimizes conduction losses. With a gate-to-source voltage tolerance of ±20 V and a threshold voltage (Vgs(th)) of 4 V at 250 µA, it offers robust gate control. The NTD32N06-1G boasts a maximum junction temperature of 175°C and a power dissipation of 1.5 W (Ta) or 93.75 W (Tj). Its IPAK package (TO-251-3 Short Leads) facilitates through-hole mounting. This component is suitable for use in power supplies, motor control, and automotive applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 93.75W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1725 pF @ 25 V |
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