NTD32N06-001
MOSFET N-CH 60V 32A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTD32N06-001 is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 32A at 25°C. With a low on-resistance (Rds On) of 26mOhm at 16A and 10V Vgs, it ensures efficient power transfer. The typical gate charge (Qg) is 60 nC at 10V, and input capacitance (Ciss) is a maximum of 1725 pF at 25V. This MOSFET offers a maximum power dissipation of 1.5W (ambient) and 93.75W (junction), operating across a wide temperature range of -55°C to 175°C. Packaged in an IPAK (TO-251-3 Short Leads) for through-hole mounting, the NTD32N06-001 is suitable for use in industrial and automotive power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 93.75W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1725 pF @ 25 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
