NTD32N06
MOSFET N-CH 60V 32A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD32N06 is an N-Channel Power MOSFET designed for demanding applications. This device features a 60V drain-source breakdown voltage and a continuous drain current rating of 32A at 25°C. With a low on-resistance of 26mOhm at 16A and 10V Vgs, it minimizes conduction losses. The NTD32N06 offers a maximum gate charge of 60 nC at 10V and an input capacitance of 1725 pF at 25V. Its maximum power dissipation is rated at 1.5W (Ta) and 93.75W (Tj). Packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount configuration, this MOSFET is suitable for use in automotive, industrial power control, and power supply applications. The operating temperature range extends from -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 93.75W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1725 pF @ 25 V |
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