NTD30N02G
MOSFET N-CH 24V 30A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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This onsemi NTD30N02G is an N-Channel Power MOSFET designed for demanding applications. It features a Drain-to-Source Voltage (Vdss) of 24V and supports a continuous drain current (Id) of 30A at 25°C. The device is housed in a TO-252-3, DPAK (2 Leads + Tab) surface-mount package, facilitating efficient thermal management with a maximum power dissipation of 75W (Tj). Key electrical specifications include a low on-resistance (Rds On) of 14.5mOhm at 30A and 10V, and a gate charge (Qg) of 20nC at 4.5V. Input capacitance (Ciss) is rated at 1000pF at 20V. This component is suitable for use in automotive and industrial power switching applications. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Rds On (Max) @ Id, Vgs | 14.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tj) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 20 V |
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