NTD3055L170T4G
MOSFET N-CH 60V 9A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTD3055L170T4G is an N-Channel MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) capability of 9A at 25°C (Ta). With a maximum on-resistance (Rds On) of 170mOhm at 4.5A and 5V Vgs, it offers low conduction losses. The device supports a gate drive voltage range of 5V and has a gate charge (Qg) of 10 nC at 5V. Input capacitance (Ciss) is specified at a maximum of 275 pF at 25V. This MOSFET is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package, suitable for automated assembly. It operates across a wide temperature range of -55°C to 175°C (TJ), with a maximum power dissipation of 1.5W (Ta) or 28.5W (Tj). The NTD3055L170T4G is commonly utilized in the automotive and industrial automation sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 4.5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 28.5W (Tj) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 275 pF @ 25 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
