NTD3055L170G
MOSFET N-CH 60V 9A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD3055L170G is a 60 V N-Channel Power MOSFET with a continuous drain current capability of 9 A at 25°C (Ta). This device features a low on-resistance of 170 mOhm maximum at 4.5 A, 5 V Vgs, and a gate drive voltage of 5 V. Designed for surface mount applications, it is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package. The NTD3055L170G offers a maximum power dissipation of 1.5 W (Ta) and 28.5 W (Tj), with an operating junction temperature range of -55°C to 175°C. Key parameters include a gate charge of 10 nC at 5 V and input capacitance of 275 pF at 25 V. This MOSFET is suitable for use in power management and switching applications across various industries.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 4.5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 28.5W (Tj) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 275 pF @ 25 V |
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