NTD3055L170-1G
MOSFET N-CH 60V 9A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD3055L170-1G is an N-Channel Power MOSFET designed for high-performance applications. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 9A at 25°C. The low on-resistance (Rds On) of 170mOhm is achieved at 4.5A and 5V gate drive voltage. Key parameters include a gate charge (Qg) of 10nC at 5V and input capacitance (Ciss) of 275pF at 25V. The device is housed in a TO-251-3 Short Leads, IPAK package, suitable for through-hole mounting. With a maximum power dissipation of 1.5W (Ta) and 28.5W (Tj), it operates within an ambient temperature range of -55°C to 175°C. This MOSFET finds application in power management, automotive systems, and industrial controls.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 4.5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 28.5W (Tj) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 275 pF @ 25 V |
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