NTD3055L170-001
MOSFET N-CH 60V 9A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD3055L170-001 is an N-Channel Power MOSFET designed for general-purpose switching applications. This component features a Drain-Source Voltage (Vdss) of 60 V and a continuous Drain Current (Id) of 9 A at 25°C (Ta). The Rds On is specified at a maximum of 170 mOhms at 4.5 A and 5 V drive voltage. The device offers a low gate charge of 10 nC at 5 V and an input capacitance (Ciss) of 275 pF at 25 V. With a maximum power dissipation of 1.5 W (Ta) and 28.5 W (Tj), it is suitable for operation across a wide temperature range from -55°C to 175°C (TJ). The NTD3055L170-001 is provided in an IPAK (TO-251-3 Short Leads, TO-251AA) package suitable for through-hole mounting. This MOSFET finds application in industrial automation, consumer electronics, and power supply designs.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 4.5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 28.5W (Tj) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 275 pF @ 25 V |
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