NTD3055L170
MOSFET N-CH 60V 9A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD3055L170 is a N-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 9A at 25°C. With a low Rds On of 170mOhm at 4.5A and 5V Vgs, it offers efficient switching performance. The NTD3055L170 is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, supporting a maximum power dissipation of 1.5W (Ta) and 28.5W (Tj). Key parameters include a Gate Charge (Qg) of 10 nC at 5V and input capacitance (Ciss) of 275 pF at 25V. This MOSFET is suitable for use in industrial and automotive power management systems. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 4.5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 28.5W (Tj) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 275 pF @ 25 V |
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