NTD3055L104-1G
MOSFET N-CH 60V 12A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD3055L104-1G is an N-Channel Power MOSFET featuring 60V drain-source breakdown voltage and continuous drain current capability of 12A at 25°C (Ta). This through-hole component, housed in an IPAK (TO-251-3 Short Leads) package, offers a maximum on-resistance of 104mOhm at 6A and 5V gate-source voltage. Key electrical characteristics include a gate charge of 20nC and input capacitance of 440pF at their respective test conditions. With a maximum junction temperature of 175°C, it provides 1.5W power dissipation at ambient temperature and 48W at junction temperature. This device finds application in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 104mOhm @ 6A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 48W (Tj) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 25 V |
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