NTD3055-150T4
MOSFET N-CH 60V 9A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD3055-150T4 is an N-Channel power MOSFET designed for efficient switching applications. This device offers a drain-source breakdown voltage of 60V and a continuous drain current capability of 9A at 25°C ambient. Featuring a low on-resistance of 150mOhm maximum at 4.5A and 10V gate-source voltage, it minimizes conduction losses. The MOSFET exhibits a gate charge of 15 nC maximum at 10V and an input capacitance of 280 pF maximum at 25V. Its surface mount DPAK package facilitates integration into compact designs. The NTD3055-150T4 is suitable for power management in consumer electronics, industrial automation, and automotive systems. Operating temperature range is -55°C to 175°C. Power dissipation is rated at 1.5W ambient and 28.8W junction. This component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 28.8W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 25 V |
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