NTD3055-150G
MOSFET N-CH 60V 9A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD3055-150G is a 60 V N-Channel MOSFET designed for surface mount applications. This device features a continuous drain current capability of 9 A at 25°C ambient temperature and a maximum power dissipation of 1.5 W (Ta) or 28.8 W (Tj). The on-resistance (Rds On) is specified at a maximum of 150 mOhm at 4.5 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 15 nC and input capacitance (Ciss) of 280 pF at 25 V. The NTD3055-150G operates within a temperature range of -55°C to 175°C and is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package. This component is suitable for power management and switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 28.8W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 25 V |
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