NTD3055-150-1G
MOSFET N-CH 60V 9A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD3055-150-1G is an N-Channel MOSFET designed for power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 9A at 25°C ambient. The Rds(on) is specified at a maximum of 150mOhm at 4.5A and 10V Vgs. With a Gate Charge (Qg) of 15 nC and Input Capacitance (Ciss) of 280 pF, it offers efficient switching characteristics. The device supports a maximum Gate-to-Source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 4V at 250µA. Power dissipation is rated at 1.5W (Ta) and 28.8W (Tj). The NTD3055-150-1G is housed in a TO-251-3 Short Leads, IPAK package, suitable for through-hole mounting and operating in temperatures from -55°C to 175°C. This MOSFET is commonly utilized in industrial, automotive, and consumer electronics power management circuits.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 28.8W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 25 V |
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