NTD3055-094-1G
MOSFET N-CH 60V 12A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD3055-094-1G is an N-Channel Power MOSFET designed for through-hole mounting in an IPAK package. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) capability of 12A at 25°C ambient. Its low on-resistance, specified at 94mOhm maximum at 6A and 10V Vgs, contributes to efficient power handling. The device offers a maximum power dissipation of 1.5W under ambient conditions and up to 48W when limited by junction temperature. Key parameters include a Gate Charge (Qg) of 20 nC maximum at 10V Vgs and an Input Capacitance (Ciss) of 450 pF maximum at 25V Vds. The operating temperature range is -55°C to 175°C (junction). This MOSFET is suitable for various industrial and automotive applications requiring robust power switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 94mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 48W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 25 V |
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