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NTD3055-094

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NTD3055-094

MOSFET N-CH 60V 12A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTD3055-094 is an N-Channel Power MOSFET designed for demanding applications. Featuring a Drain-to-Source Voltage (Vdss) of 60 V and a continuous Drain Current (Id) of 12 A at 25°C (Ta), this component offers a low on-resistance of 94 mOhm at 6 A, 10 V. The device is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package. With a maximum power dissipation of 1.5 W (Ta) and 48 W (Tj), it supports a junction operating temperature range of -55°C to 175°C. Key parameters include a Gate Charge (Qg) of 20 nC at 10 V and Input Capacitance (Ciss) of 450 pF at 25 V, with a Vgs(th) of 4V at 250 µA. This MOSFET is suitable for use in power management, automotive, and industrial control systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Rds On (Max) @ Id, Vgs94mOhm @ 6A, 10V
FET Feature-
Power Dissipation (Max)1.5W (Ta), 48W (Tj)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds450 pF @ 25 V

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