NTD2955PT4G
MOSFET P-CH 60V 12A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD2955PT4G is a P-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current capability of 12A at 25°C. It offers a low on-resistance (Rds On) of 180mOhm maximum at 6A and 10V gate drive. The device is packaged in a TO-252-3, DPAK (Surface Mount) configuration, suitable for high-power density designs. Key parameters include a gate charge (Qg) of 30 nC maximum at 10V and an input capacitance (Ciss) of 750 pF maximum at 25V. With a maximum power dissipation of 55W at junction temperature, this MOSFET is commonly found in power switching, motor control, and industrial applications. It operates within an extended temperature range of -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 55W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 25 V |